DocumentCode
1982431
Title
Analysis of a kind of diode over-current oscillation mechanism
Author
Yu, Chengda ; Deng, Qibin ; Han, Wei ; Li, Ping ; Feng, Deren
Author_Institution
Beijing Inst. of Special Electromech. Technol., Beijing, China
fYear
2011
fDate
16-18 Sept. 2011
Firstpage
2889
Lastpage
2893
Abstract
Under certain conditions, semiconductor diodes will produce the phenomenon of current periodic change in DC circuit. We designed a experiment due to some certain silicon epitaxial planar diode, and the test results showed that when the current flowing the diode overruns rated value, current regular relaxation oscillation appears, and the oscillation period is in several seconds. As long as the voltage remains the same, this kind of relaxation oscillation can last a few minutes, even longer. This phenomenon is different from Gunn oscillation, because oscillation frequency of the latter is much more than that of the former. Studying this kind of phenomenon has potential application prospect in the area developing new-type oscillators, helps to look into working performance of semiconductor diode, and further overcomes the deficiency of manufacturing process.
Keywords
relaxation oscillators; semiconductor device models; semiconductor diodes; DC circuit; current periodic change; diode over-current oscillation mechanism; oscillation frequency; relaxation oscillation; semiconductor diode; silicon epitaxial planar diode; Cathodes; Electric potential; Mathematical model; Metals; Oscillators; Semiconductor diodes; Switches; Drift; Particle aggregation; Relaxation oscillation; Transit Time; Virtual Cathode; Voltage-controlled Switch;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Control Engineering (ICECE), 2011 International Conference on
Conference_Location
Yichang
Print_ISBN
978-1-4244-8162-0
Type
conf
DOI
10.1109/ICECENG.2011.6057483
Filename
6057483
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