Silicon-germanium-boron amorphous alloy on p-type Si as infrared Schottky detector

Author

Gomez, J. G Santos ; Jacome, Alfonso Torres

Author_Institution

INAOE, Puebla, Mexico

fYear

1998

fDate

2-4 Mar 1998

Firstpage

75

Lastpage

78

Abstract

In this work, Schottky barriers obtained from the SiGeB alloy on p-Si are demonstrated and proposed as photoemissive infrared photodetectors. The SiGeB alloy is obtained by PECVD at 300°C, the source gases used were SiH₄, GeF₄ and B₂H₆. The resulting barrier height when deposited onto p-Si is determined from I-V measurements and ranges from 0.7 to 0.38 eV. The main parameter in the barrier height control is the deposition pressure

Keywords

Ge-Si alloys; Schottky barriers; Schottky diodes; amorphous semiconductors; boron alloys; infrared detectors; photodetectors; photoemissive devices; plasma CVD; plasma CVD coatings; 300 C; I-V measurements; IR Schottky detector; PECVD; Schottky barriers; Si; SiGeB; SiGeB alloy on p-Si; absorption coefficient; amorphous alloy; barrier height control; deposition pressure dependence; photoemissive infrared photodetectors; Amorphous materials; Equations; Gases; Infrared detectors; Photoelectricity; Platinum; Schottky barriers; Silicides; Silicon alloys; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 1998. Proceedings of the 1998 Second IEEE International Caracas Conference on

Conference_Location

Isla de Margarita

Print_ISBN

0-7803-4434-0

Type

conf

DOI

10.1109/ICCDCS.1998.705809

Filename

705809