Single mode AlGaInAs/InP hexagonal resonator microlasers

Author

Lin, Jian-Dong ; Huang, Yong-Zhen ; Yang, Yue-De ; Yao, Qi-Feng ; Lv, Xiao-Meng ; Xiao, Jin-Long ; Du, Yun

Author_Institution

State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China

fYear

2011

fDate

Aug. 28 2011-Sept. 1 2011

Firstpage

41

Lastpage

42

Abstract

AlGalnAs/InP hexagonal resonator microlasers are fabricated using standard photolithography and ICP etching process. Room temperature continuous-wave electrically injected operation is realized for the hexagon microlasers with an output waveguide connected to one vertex. Single mode operation is achieved with the side mode suppression ratio up to 25 dB for a hexagon microlaser with the edge length of 16 μm and the output waveguide width of 2 μm. The experimental results indicate that single transverse mode operation is easy to realize in hexagon microlasers.

Keywords

III-V semiconductors; aluminium compounds; etching; gallium compounds; indium compounds; laser modes; laser stability; microcavity lasers; optical fabrication; photolithography; semiconductor lasers; AlGaInAs-InP; ICP etching; hexagonal resonator microlasers; photolithography; side mode suppression ratio; single mode laser; transverse mode operation; Indium phosphide; Laser modes; Optical resonators; Optical waveguides; Vertical cavity surface emitting lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011

Conference_Location

Sydney, NSW

Print_ISBN

978-1-4577-1939-4

Type

conf

DOI

10.1109/IQEC-CLEO.2011.6193651

Filename

6193651