Silicon single crystalline MEMS shunt contact switch for RF application

Author

Aharon, Oren ; Feldman, Shai ; Nemirovsky, Yael

Author_Institution

Facultv of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

fYear

2004

fDate

6-7 Sept. 2004

Firstpage

281

Lastpage

284

Abstract

A micro-electro-mechanical (MEMS) DC to RF shunt switch was fabricated using a bulk micromachining process for single crystal silicon. The switch was vertically integrated to a microwave circuit using flip-chip bonding technology. The pull-in voltage and switching time were measured. Also, RF characterization of switch states was performed. This new design offers the potential for a high power applications switch. The concept of the described packaged switch offers a stand alone switch, which is not dependent on substrate material or technology.

Keywords

flip-chip devices; micromachining; microswitches; microwave integrated circuits; microwave switches; MEMS shunt contact switch; RF characterization; Si; bulk micromachining process; flip-chip bonding technology; high power switch; microwave integrated circuit; pull-in voltage; silicon single crystal MEMS switch; stand alone switch; switching time; Bonding; Contacts; Crystallization; Integrated circuit technology; Micromachining; Micromechanical devices; Radio frequency; Silicon; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Electronics Engineers in Israel, 2004. Proceedings. 2004 23rd IEEE Convention of

Print_ISBN

0-7803-8427-X

Type

conf

DOI

10.1109/EEEI.2004.1361146

Filename

1361146