• DocumentCode
    1983741
  • Title

    20GHz GaAs FET Oscillator using a Dielectric Resonator

  • Author

    Mizumura, Motoo ; Wada, Kenzo ; Aihara, Shigenobu ; Haga, Isao

  • Author_Institution
    Microwave and Satellite Communications Division, Nippon Electric Co., Ltd., 4035 Ikebe-cho, Midori-Ku, Yokohama, 226 Japan
  • fYear
    1982
  • fDate
    13-17 Sept. 1982
  • Firstpage
    175
  • Lastpage
    180
  • Abstract
    A new type of highly stabilized 20 GHz GaAs FET oscillator using a dielectric resonator has been developed. Not using any frequency multiplying device, it features compactness, simple configuration and high reliability. A frequency stability of within ±15ppm (0°C~+50°C) was obtained at 20 GHz.
  • Keywords
    Circuit stability; Dielectrics; Frequency conversion; Gallium arsenide; Mass production; Microstrip; Microwave FETs; Microwave circuits; Microwave oscillators; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1982. 12th European
  • Conference_Location
    Helsinki, Finland
  • Type

    conf

  • DOI
    10.1109/EUMA.1982.333157
  • Filename
    4131761
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1983741