Computer Modeling of Some Solid State Devices

The paper presents a set of flexible computer programs for the modeling of bipolar and MOS devices with one or two dimensions, in steady state or dynamic regime. The numerical treatment allows for the exact solution of the set of non-linear partial differential equations governing the semiconductor device operation which is solved iteratively using finite difference implicit methods. The internal physical mechanisms are rigorously implemented. Apart from the non-linear generation-recombination and mobility laws, other physical mechanisms like Fermi statistics, bandgap narrowing, thermal effects, dynamics of recombination traps and surface states were also implemented.