DocumentCode
1985080
Title
High performance 2.4 /spl mu/m GaInAsSb/AlGaAsSb laser diodes
Author
Salhi, A. ; Rouillard, Y. ; Angellier, J. ; Garcia, M. ; Marcadet, X.
Author_Institution
Centre d´´Electron. et de Micro-optoelectron. de Montpellier, Univ. Montpellier II, France
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
Strained triple-quantum-well (TQW) GaInAsSb/AlGaAsSb laser diodes were fabricated. Internal losses as low as 4 cm/sup -1/ and threshold current density per quantum well as low as 34 A/cm/sup 2/ for a 3 mm long-cavity were obtained.
Keywords
aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical losses; quantum well lasers; 2.4 mum; 3 mm; GaInAsSb-AlGaAsSb; GaInAsSb/AlGaAsSb laser; high performance laser; internal losses; laser cavity; laser diodes; laser fabrication; strained triple-quantum-well;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361212
Link To Document