• DocumentCode
    1985320
  • Title

    Flash Coding Scheme Based on Error-Correcting Codes

  • Author

    Huang, Qin ; Lin, Shu ; Abdel-Ghaffar, Khaled

  • Author_Institution
    Electr. & Comput. Eng. Dept., Univ. of California, Davis, CA, USA
  • fYear
    2010
  • fDate
    6-10 Dec. 2010
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Flash memory is a non-volatile computer storage device which consists of blocks of cells. While increasing the voltage level of a single cell is fast and simple, reducing the level of a cell requires the erasing of the entire block containing the cell. Since block erasures are costly, traditional flash coding schemes have been developed to maximize the number of writes before a block erasure is needed. A novel coding scheme based on error-correcting codes allows the cell levels to increase as evenly as possibly and as a result, increases the number of writes before a block erasure. The scheme is also capable of combating noise in flash memories in order to enhance data reliability.
  • Keywords
    error correction codes; flash memories; random-access storage; reliability; block erasure; data reliability; error-correcting codes; flash coding scheme; flash memory; nonvolatile computer storage device; Ash; Decoding; Encoding; Error correction codes; Flash memory; IEEE Communications Society; Simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Global Telecommunications Conference (GLOBECOM 2010), 2010 IEEE
  • Conference_Location
    Miami, FL
  • ISSN
    1930-529X
  • Print_ISBN
    978-1-4244-5636-9
  • Electronic_ISBN
    1930-529X
  • Type

    conf

  • DOI
    10.1109/GLOCOM.2010.5683364
  • Filename
    5683364