• DocumentCode
    1986135
  • Title

    Gate-controlled rectifying behavior in C70@SWNTs networks

  • Author

    Guo, Ao ; Fu, Yunyi ; Liu, Jia ; Guan, Lunhui ; Shi, Zujin ; Gu, Zhennan ; Huang, Ru ; Zhang, Xing

  • Author_Institution
    Department of Microelectronics, Peking University, Beijing, China
  • fYear
    2005
  • fDate
    19-21 Dec. 2005
  • Firstpage
    23
  • Lastpage
    26
  • Abstract
    We observed gate-controlled current rectification in C70@SWNTs networks. The electrical transport characterization can be fitted well with the conventional Schottky diode model. The origin of the rectifying behavior in peapod networks device is also qualitatively discussed. This paper also demonstrates a strategy for diode fabrication based on peapod networks and selective electrical breakdown procedure.
  • Keywords
    Electric breakdown; Electrodes; FETs; Fabrication; Intelligent networks; Nanoelectronics; Photonic band gap; Schottky diodes; Semiconductivity; Semiconductor diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
  • Print_ISBN
    0-7803-9339-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2005.1635196
  • Filename
    1635196
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1986135