• DocumentCode
    1987309
  • Title

    Explicit Analytical Charge-Based Model of Asymmetrical Double Gate MOSFET

  • Author

    Reyboz, Marina ; Rozeau, Olivier ; Poiroux, Thierry ; Martin, Patrick ; Lecarval, Gilles ; Jomaah, Jalal

  • Author_Institution
    CEA-LETI, 17 rue des Martyrs. 38054 Grenoble Cedex 9, FRANCE; IMEP. 23 rue des Martyrs, B.P. 257, 38016, Grenoble Cedex, FRANCE.
  • fYear
    2005
  • fDate
    19-21 Dec. 2005
  • Firstpage
    257
  • Lastpage
    260
  • Abstract
    This paper provides an explicit analytical charge-based model of Asymmetrical Double Gate (ADG) MOSFET. Its is based on Poisson equation resolution and field continuity equations, and gives explicit analytical expressions of the inversion charge and the drain current considering a long undoped transistor. There are no charge-sheet approximation and no fitting parameter. Consequently, this is a fully analytical and predictive model allowing to describe planar DG MOSFET as well as FinFET. The validity of this model is demonstrated by comparisons with Atlas simulations.
  • Keywords
    Analytical models; CMOS technology; Circuit simulation; FinFETs; MOSFET circuits; Poisson equations; Predictive models; Silicon; Statistics; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
  • Print_ISBN
    0-7803-9339-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2005.1635255
  • Filename
    1635255
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1987309