DocumentCode
1988065
Title
Low voltage sub-30nm dielectric and metal nanopatterning for plasmonic and metamaterial applications
Author
Tobing, L.Y.M. ; Tjahjana, L. ; Zhang, D.H.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear
2011
fDate
Aug. 28 2011-Sept. 1 2011
Firstpage
1835
Lastpage
1837
Abstract
We present a simple approach for sub-30nm dielectric and metal patterning based on low voltage electron beam lithography and standard lift-off process by using 42nm hydrogen silsesquioxane and 200nm ZEP resist.
Keywords
electron beam lithography; metamaterials; nanolithography; nanopatterning; plasmonics; resists; ZEP resist; dielectric nanopatterning; hydrogen silsesquioxane resist; low voltage electron beam lithography; metal nanopatterning; metamaterials; plasmonics; size 200 nm; size 30 nm; size 42 nm; standard lift-off process; Acceleration; Apertures; Electron beams; Lithography; Metals; Resists; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011
Conference_Location
Sydney, NSW
Print_ISBN
978-1-4577-1939-4
Type
conf
DOI
10.1109/IQEC-CLEO.2011.6193856
Filename
6193856
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