TCAD modeling and simulation of non-resonant plasmonic THz detector based on asymmetric silicon MOSFETs

Author

Min Woo Ryu ; Jeong Seop Lee ; Kibog Park ; Kyung Rok Kim ; Wook-Ki Park ; Seong-Tae Han

Author_Institution

Sch. of Electr. & Comput. Eng., Ulsan Nat. Inst. of Sci. & Technol. (UNIST), Ulsan, South Korea

fYear

2013

fDate

3-5 Sept. 2013

Firstpage

200

Lastpage

203

Abstract

We report the experiments of plasmonic terahertz (THz) wave detector based on silicon field-effect transistors (FETs) in the nonresonant sub-THz (0.2 THz) regime. The detector responsivity (R_V) as a function of gate voltage has been successfully controlled by the radiation power in agreement with the plasma wave detection theory. To investigate the effects of the overdamped charge asymmetry on R_V, FET structure with the asymmetric source and drain area under the gate has been proposed. The enhanced R_V according to the increase of asymmetry ratio between source and drain region has been confirmed experimentally.

Keywords

MOSFET; millimetre wave detectors; plasmonics; submillimetre wave detectors; terahertz wave detectors; TCAD modeling; TCAD simulation; asymmetric silicon MOSFET; asymmetry ratio; detector responsivity; field effect transistor; gate voltage; nonresonant plasmonic terahertz detector; overdamped charge asymmetry; plasmonic terahertz wave detector; radiation power; Detectors; HEMTs; Logic gates; Plasma waves; Plasmons; Silicon; asymmetry ratio; nonresonant regime; plasmonic terahertz wave; responsivity; silicon FET detector;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on

Conference_Location

Glasgow

ISSN

1946-1569

Print_ISBN

978-1-4673-5733-3

Type

conf

DOI

10.1109/SISPAD.2013.6650609

Filename

6650609