Performance analysis of a bandgap engineered Silicon bipolar transistor

Author

Vishal ; Ammar ; Chauhan, R.K.

Author_Institution

Dept. of Electron. & Commun. Eng., M.M.M. Eng. Coll., Gorakhpur, India

fYear

2009

fDate

22-24 Dec. 2009

Firstpage

78

Lastpage

80

Abstract

Silicon-Germanium Heterojunction Bipolar Transistor (SiGe HBTs) represents the first practical bandgap-engineered Silicon-based transistor. The design issues related to SiGe HBT that makes it suitable for high speed application has been explored. Emphasis has been given to the requirement of low base resistance for achieving a reasonable value of gain at a high frequency. Compared to Silicon bipolar transistors much higher values of gain are obtained for such HBTs.

Keywords

Ge-Si alloys; energy gap; heterojunction bipolar transistors; semiconductor heterojunctions; SiGe; SiGe HBT; bandgap engineered silicon bipolar transistor; bandgap-engineered silicon-based transistor; low base resistance; performance analysis; silicon bipolar transistors; silicon-germanium heterojunction bipolar transistor; Bipolar transistors; Consumer electronics; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Microprocessors; Performance analysis; Photonic band gap; Silicon alloys; Silicon germanium; Bandgap Engineering; Ge; Normalized gain; Si; SiGe HBT;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on

Conference_Location

Varanasi

Print_ISBN

978-1-4244-4846-3

Type

conf

DOI

10.1109/ELECTRO.2009.5441168

Filename

5441168