DocumentCode
1988590
Title
Evaluation of spin lifetime in strained UT2B silicon-on-insulator MOSFETs
Author
Osintsev, Dmitri ; Sverdlov, Viktor ; Selberherr, Siegfried
Author_Institution
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear
2013
fDate
3-5 Sept. 2013
Firstpage
236
Lastpage
239
Abstract
We investigate the surface roughness induced spin relaxation in scaled spin MOSFETs. We show that the regions in the momentum space, responsible for strong spin relaxation, can be efficiently removed by applying uniaxial strain. The spin lifetime in strained films can be improved by orders of magnitude, while the momentum relaxation time determining the electron mobility can only be increased by a factor of two.
Keywords
MOSFET; electron mobility; semiconductor device models; silicon-on-insulator; surface roughness; electron mobility; relaxation time; spin lifetime; strained UT2B silicon-on-insulator MOSFET; strained films; surface roughness induced spin relaxation; uniaxial strain; Films; Phonons; Rough surfaces; Scattering; Silicon; Strain; Surface roughness; phonon relaxation; shear strain; surface-roughness relaxation; ultra-scaled SOI MOSFETs;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location
Glasgow
ISSN
1946-1569
Print_ISBN
978-1-4673-5733-3
Type
conf
DOI
10.1109/SISPAD.2013.6650618
Filename
6650618
Link To Document