Electromigration analyses of open TSVs

A study of electromigration in open through silicon vias (TSVs) is presented. First, the possible effects of the aluminium/tungsten interface are studied in a very simplified structure to find the parameters utmost concerning electromigration. The blocking interface without vacancy sink is found to have the highest resulting vacancy concentrations. This result is further used to model the interface inside the cylindric TSV structure. The simulations show that the highest stresses are located at the inner surface of the aluminium cylinder above the interface between aluminium and tungsten. This is near the region where the current is introduced into the TSV, which happens to be the location of the highest current density at the interface.