DocumentCode
1988808
Title
A 10 Watt C-Band GAAS FET Power Amplifier for Satellite Down-Link Communications Systems
Author
Czech, J. ; Khilla, A.M. ; Schünzel, M.
Author_Institution
ANT Nachrichtentechnik GmbH, Raumfahrt, D-7150 Backnang
fYear
1984
fDate
10-13 Sept. 1984
Firstpage
106
Lastpage
111
Abstract
The results of an ESA program to develop a space-qualified solid-state power amplifier (SSPA) and its electronic power conditioner (EPC) as a 16 W TWTA replacement are presented. Not only the microwave performance specifications but also producibility and reliability are taken into account in the amplifier design. The 10-Watt amplifier is designed to operate in the 3.7 to 4.2 GHz band and to withstand the rigors of launch and to provide a useful life of 10 years in the space environment. It provides an operating gain of 65.5 dB in small signal operation and 63 dB for 10-Watt output power with an efficiency of 28% without EPC and 24% with EPC. The power amplifier is fully gain stabilized over the temperature range of 0 °C to 50 °C.
Keywords
Artificial satellites; Gain; Gallium arsenide; Microwave FETs; Microwave amplifiers; Power amplifiers; Power generation; Power system reliability; Solid state circuits; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1984. 14th European
Conference_Location
Liege, Belgium
Type
conf
DOI
10.1109/EUMA.1984.333337
Filename
4132019
Link To Document