DocumentCode
1989118
Title
Simulation of CBRAM devices with the level set method
Author
Dorion, P. ; Cueto, O. ; Reyboz, M. ; Vianello, E. ; Barbe, J.C. ; Grigoriu, A. ; Maday, Y.
Author_Institution
LETI MINATEC, CEA, Grenoble, France
fYear
2013
fDate
3-5 Sept. 2013
Firstpage
340
Lastpage
343
Abstract
A TCAD model for Chalcogenide based CBRAM is introduced. This model relies on the level set method to follow the growth of the filament in the electrolyte. We couple the level set method with physical equations which model the cations migration and the electric field in the electrolyte and in the filament. The formation and the dissolution of the filament can be simulated. Comparisons between simulations and electrical results are used to validate our model.
Keywords
electrolytes; integrated circuit modelling; random-access storage; CBRAM devices; TCAD model; cations migration; chalcogenide based CBRAM; dissolution; electric field; electrolyte; level set method; physical equations; Conductivity; Electric potential; Electrodes; Equations; Level set; Mathematical model; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location
Glasgow
ISSN
1946-1569
Print_ISBN
978-1-4673-5733-3
Type
conf
DOI
10.1109/SISPAD.2013.6650644
Filename
6650644
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