DocumentCode
1989148
Title
Properties of gallium selenide doped with sulfur from melt and from gas phase
Author
Voevodina, O.V. ; Morozov, AN ; Sarkisov, S.Yu. ; Bereznaya, S.A. ; Korotchenko, Z.V. ; Dikov, D.E.
Author_Institution
Siberian Physico-Tech. Inst., Tomsk, Russia
fYear
2005
fDate
26 June-2 July 2005
Firstpage
551
Lastpage
555
Abstract
This paper presents the results of investigation on influence of doping with sulfur and annealing in sulfur atmosphere on properties of promising nonlinear optical gallium selenide crystals, grown by the Bridgeman method from melts with content of sulfur 0.01-3 mass % and annealed in sulfur atmosphere.
Keywords
III-VI semiconductors; annealing; doping; gallium compounds; nonlinear optics; sulphur; Bridgeman method; GaSe:S; nonlinear optical crystals; sulfur atmosphere; Annealing; Atmosphere; Conductivity; Crystals; Doping; Gallium compounds; Gases; Nonlinear optics; Optical films; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Science and Technology, 2005. KORUS 2005. Proceedings. The 9th Russian-Korean International Symposium on
Print_ISBN
0-7803-8943-3
Type
conf
DOI
10.1109/KORUS.2005.1507780
Filename
1507780
Link To Document