Dynamic Test Methods for COTS SRAMs

Author

Tsiligiannis, G. ; Dilillo, L. ; Gupta, V. ; Bosio, A. ; Girard, P. ; Virazel, A. ; Puchner, H. ; Bosser, Alexandre ; Javanainen, Arto ; Virtanen, Ari ; Frost, Christopher ; Wrobel, F. ; Dusseau, L. ; Saigne, F.

Author_Institution

Lab. d´Inf., de Robot. et de Microelectron. de Montpellier (LIRMM), Univ. de Montpellier II, Montpellier, France

Volume

61

Issue

6

fYear

2014

fDate

Dec. 2014

Firstpage

3095

Lastpage

3102

Abstract

In previous works, we have demonstrated the importance of dynamic mode testing of SRAM components under ionizing radiation. Several types of failures are difficult to expose when the device is tested under static (retention) mode. With the purpose of exploring and defining the most complete testing procedures and reveal the potential hazardous behaviors of SRAM devices, we present novel methods for the dynamic mode radiation testing of SRAMs. The proposed methods are based on different word address accessing schemes and data background: Fast Row, Fast Column, Pseudorandom, Adjacent (Gray) and Inverse Adjacent (Gray). These methods are evaluated by heavy ion and atmospheric-like neutron irradiation of two COTS SRAMs of 90 nm and 65 nm technology.

Keywords

SRAM chips; neutron effects; radiation hardening (electronics); COTS SRAM; SRAM devices; atmospheric-like neutron irradiation; data background; dynamic mode radiation testing; dynamic mode testing; dynamic test methods; heavy ion irradiation; ionizing radiation; size 65 nm; size 90 nm; static retention mode; word address accessing schemes; Ions; Neutrons; Radiation effects; Random access memory; Single event upsets; 65 nm; 90 nm; COTS; SRAMs; dynamic test; heavy ions; multiple cell upset (MCU); neutrons; single event upset (SEU);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2363123

Filename

6940326