DocumentCode
1990066
Title
Optimized Nickel Suilicide Technology for Fully Depleted Nano-Scale SIO MOSFETs
Author
Yun, J.G. ; Oh, S.Y. ; Kim, Y.J. ; Lee, W.J. ; Wang, T. ; Tuya, A. ; Ji, H.H. ; Han, I.S. ; Wang, J.S. ; Lee, H.D.
Author_Institution
Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon
fYear
0
fDate
0-0 0
Firstpage
765
Lastpage
768
Abstract
Optimized nickel silicide technology is proposed for high performance fully depleted nano-scale SOI CMOSFETs. Nickel silicide properties with different initial nickel thicknesses were investigated on thin film SOI MOSFETs. Silicon consumption rate and correlation between the deposited nickel and the formed nickel silicide thickness were calculated. It was shown that more thermally stable nickel silicide was formed with the controlled nickel thickness. Moreover, enhanced device performance of fully depleted SOI NMOSFET was demonstrated with the controlled nickel thickness
Keywords
MOSFET; nickel compounds; silicon-on-insulator; fully depleted nanoscale SOI MOSFET; optimized nickel silicide technology; silicon consumption rate; Conductivity; MOSFETs; Nickel; Semiconductor films; Shape; Silicidation; Silicides; Silicon; Solids; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Conference_Location
Howloon, Hong Kong
Print_ISBN
0-7803-9339-2
Type
conf
DOI
10.1109/EDSSC.2005.1635389
Filename
1635389
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