• DocumentCode
    1990209
  • Title

    Extraction of Early Voltage and Thermal Resistance in InP/InGaAs HBTs

  • Author

    Chang, Yang-Hua ; Chang, Zhi-Juan ; Hsu, Hui-Feng

  • Author_Institution
    Department of Electronic Engineering, National Yunlin University of Science and Technology, Taiwan, R. O. C., E-mail: changyh@yuntech.edu.tw
  • fYear
    2005
  • fDate
    19-21 Dec. 2005
  • Firstpage
    787
  • Lastpage
    790
  • Abstract
    In this paper, we propose a procedure to extract the Early voltage and thermal resistance in InP/InGaAs HBTs. The technique is able to differentiate the effects of the Early voltage and the thermal resistance in Ic-VCEchacteristic. Avalanche breakdown effect is also considered. The extraction result is applied to VBIC model and shows excellent agreement with measurement data.
  • Keywords
    Avalanche breakdown; Electric breakdown; Electrical resistance measurement; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Substrates; Temperature; Thermal resistance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
  • Print_ISBN
    0-7803-9339-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2005.1635395
  • Filename
    1635395
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1990209