DocumentCode
1990472
Title
Integrated Microstrip and Antipodal Fin-Line Leads to Enhanced Performance P.I.N. Diode Components
Author
Greed, R.B.
Author_Institution
GEC Research Laboratories, Marconi Research Centre, Great Baddow, Essex, England.
fYear
1984
fDate
10-13 Sept. 1984
Firstpage
593
Lastpage
597
Abstract
Distributed microstrip line tuning elements are used in conjunction with fin-line techniques to design p.i.n. diode switches for the 26 - 110 GHz frequency band. Experimental results are presented for components utilising the forward and reverse switching modes operating at centre frequencies of 34 GHz and 94 GHz.
Keywords
Attenuators; Circuits; Dynamic range; Finline; Frequency; Inductance; Microstrip; Semiconductor diodes; Switches; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1984. 14th European
Conference_Location
Liege, Belgium
Type
conf
DOI
10.1109/EUMA.1984.333389
Filename
4132096
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