A Coupled Algorithm of Finite Volume Method with Monte-Carlo Method for Simulating Transient Radiation Effects of Semiconductor Devices

Author

Wei, Yuan ; Xie, Honggang ; Gong, Ding ; Zhu, Jinhui ; Niu, Shengli

Author_Institution

Northwest Inst. of Nucl. Technol., Xi´´an, China

fYear

2012

fDate

27-30 May 2012

Firstpage

1

Lastpage

4

Abstract

A coupled algorithm of FVM (Finite-Volume Method) with MC (Monte-Carlo) Method for particle transport has been developed in order to study the transient radiation response of semiconductor devices from device-level. A code based on GEANT4 is also built to trace the incident particle and to give the distribution of ionized charges, which acts as a source term in semiconductor governing equations. The transient response of irradiated devices is obtained by solving these equations numerically with FVM, and a part of results is compared with MEDICI´ s, which agree well.

Keywords

Monte Carlo methods; finite volume methods; radiation effects; semiconductor device models; technology CAD (electronics); GEANT4 code; MEDICI; Monte Carlo method; coupled algorithm; device level simulation; finite volume method; ionized charges; particle transport; semiconductor devices; transient radiation effects; transient radiation response; Equations; Inverters; Mathematical model; Radiation effects; Semiconductor devices; Transient analysis; Transient response;

fLanguage

English

Publisher

ieee

Conference_Titel

Engineering and Technology (S-CET), 2012 Spring Congress on

Conference_Location

Xian

Print_ISBN

978-1-4577-1965-3

Type

conf

DOI

10.1109/SCET.2012.6342052

Filename

6342052