Estimation of the /spl Gamma/-X crossover composition in disordered (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P using n-i-n diodes

Author

Morrison, A.P. ; Lambkin, J.D. ; van der Poel, C.J. ; Valster, A.

Author_Institution

Nat. Microelectron. Res. Centre, Cork, Ireland

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

393

Lastpage

395

Abstract

The conduction band offset between (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P and Ga/sub 0.5/In/sub 0.5/P has been determined from the I-V characteristics of n-i-n diodes fabricated from these materials. These measurements were made as a function of temperature for various aluminium compositions, x, thus providing an estimate of the /spl Gamma/-X crossover composition in the AlGaInP.

Keywords

III-V semiconductors; aluminium compounds; conduction bands; gallium compounds; indium compounds; interface states; semiconductor diodes; semiconductor lasers; (AlGa)/sub 0.5/In/sub 0.5/P; /spl Gamma/-X crossover composition; Al composition dependence; Ga/sub 0.5/In/sub 0.5/P; I-V characteristics; conduction band offset; disordered (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P; laser diodes; n-i-n diodes; Aluminum; Electron emission; Energy measurement; Gallium alloys; Laboratories; Microelectronics; Photonic band gap; Semiconductor diodes; Temperature; Thermionic emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650407

Filename

650407