Short wavelength light emitting diodes in Al/sub 0.4/Ga/sub 0.6/P/GaP quantum wells

Author

Gerhold, M. ; Kamath, K. ; Bhattacharya, P.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

397

Lastpage

400

Abstract

We report the photoluminescence and fabrication of GaP/AlGaP quantum well LEDs grown by MOVPE. The samples show PL from both the direct bandgap (/spl lambda//spl sim/363 nm) and the indirect bandgap (/spl lambda//spl sim/556 nm). The peak at 556 nm seems to originate from a no-phonon transition. Room temperature green LEDs were achieved and ultraviolet LEDs may be possible.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; light emitting diodes; photoluminescence; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; 363 nm; 556 nm; Al/sub 0.4/Ga/sub 0.6/P-GaP; Al/sub 0.4/Ga/sub 0.6/P/GaP quantum wells; MOVPE; direct bandgap; indirect bandgap; no-phonon transition; photoluminescence; quantum well LEDs; room temperature green LEDs; short wavelength light emitting diodes; ultraviolet LEDs; Charge carrier processes; Electric breakdown; Impurities; Interface states; Light emitting diodes; Luminescence; Photonic band gap; Substrates; Superlattices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650408

Filename

650408