220 K continuous-wave operation of AlGaAs/GaAs multi-quantum well vertical-cavity surface-emitting laser on Si substrate

Author

Egawa, T. ; Nakanishi, N. ; Jimbo, T. ; Umeno, M.

Author_Institution

Res. Center for Micro-Struct. Devices, Nagoya Inst. of Technol., Japan

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

401

Lastpage

404

Abstract

An AlGaAs/GaAs multi-quantum well vertical-cavity surface-emitting laser diode (VCSELD) has been grown on a Si substrate using metalorganic chemical vapor deposition. The VCSELD structure consists of ten quantum well active layers and a 23-pair of AlAs/Al/sub 0.1/Ga/sub 0.9/As distributed Bragg reflectors. The VCSELD exhibited a threshold current of 223 mA under continuous-wave conditions at 220 K. Electroluminescence observation showed that optical degradation is caused by the generation and growth of dark-line defects.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; electroluminescence; gallium arsenide; quantum well lasers; semiconductor growth; surface emitting lasers; vapour phase epitaxial growth; 220 K; 223 mA; AlAs-Al/sub 0.1/Ga/sub 0.9/As; AlAs/Al/sub 0.1/Ga/sub 0.9/As distributed Bragg reflectors; AlGaAs-GaAs; AlGaAs/GaAs multi-quantum well vertical-cavity surface-emitting laser; Si; Si substrate; VCSELD structure; continuous-wave operation; dark-line defects; electroluminescence observation; metalorganic chemical vapor deposition; optical degradation; quantum well active layers; threshold current; Diode lasers; Distributed Bragg reflectors; Gallium arsenide; Gold; Optical devices; Quantum well devices; Reflectivity; Surface emitting lasers; Ultrafast optics; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650410

Filename

650410