Total ionizing dose radiation effects between the Wave layout style and its conventional counterpart focusing on the digital IC applications

Author

Navarenho de Souza, Rafael ; Guazzelli da Silveira, Marcilei A. ; Pinillos Gimenez, Salvador

Author_Institution

Dept. of Electr. Eng., Centro Univ. da FEI, São Bernardo do Campo, Brazil

fYear

2013

fDate

23-27 Sept. 2013

Firstpage

1

Lastpage

5

Abstract

This paper performs an experimental comparative study of the X-ray radiation effects between the Wave layout style (S-shaped gate geometry) and the Conventional (rectangular gate geometry) counterpart, focusing on the digital integrated circuits (IC) applications. Wave layout style demonstrates to be more tolerant regarding the total ionizing radiation (TID) effects for digital IC. By working with Wave layout style instead of the Conventional counterpart, it can significantly improve the device performance in terms of the threshold voltage (V_TH), subthreshold slope (S), the on-state drain current (I_ON), the off-state drain current (I_OFF), the I_ON/I_OFF ratio, and the on- state drain to source series resistance (R_ON) and consequently the digital IC operating in radioactive environment.

Keywords

digital integrated circuits; geometry; radiation effects; ION/IOFF ratio; RON; S-shaped gate geometry; TID effects; VTH; X-ray radiation effects; digital IC applications; digital integrated circuits applications; ionizing dose radiation effects; off-state drain current; on- state drain to source series resistance; on-state drain current; radioactive environment; rectangular gate geometry; subthreshold slope; threshold voltage; total ionizing radiation effects; wave layout style; Integrated circuits; Layout; Logic gates; MOSFET; Performance evaluation; Radiation effects; Resistance; TID; Wave layout style; X-ray radiation; radiation robustness; radiation tolerance; total ionizing dose;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on

Conference_Location

Oxford

Type

conf

DOI

10.1109/RADECS.2013.6937374

Filename

6937374