• DocumentCode
    1992492
  • Title

    New SEE and TID test results for 2-Gbit and 4-Gbit DDR3 SDRAM devices

  • Author

    Herrmann, Markus ; Grurmann, Kai ; Gliem, F. ; Schmidt, Heidemarie ; Muschitiello, Michele ; Ferlet-Cavrois, Veronique

  • Author_Institution
    Inst. of Comput. & Network Eng., Tech. Univ. Braunschweig, Braunschweig, Germany
  • fYear
    2013
  • fDate
    23-27 Sept. 2013
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Different 2-Gbit and 4-Gbit DDR3 SDRAM devices have been tested. Under 60Co, some of them showed a peculiar error pattern. Under heavy ions, none of the tested types displayed any latch-up.
  • Keywords
    DRAM chips; integrated circuit testing; radiation hardening (electronics); DDR3 SDRAM devices; SEE test result; TID test result; error pattern; heavy ions; Conferences; Current measurement; Performance evaluation; Radiation effects; SDRAM; Single event upsets; Temperature measurement; DDR3; SDRAM; SEE; TID;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
  • Conference_Location
    Oxford
  • Type

    conf

  • DOI
    10.1109/RADECS.2013.6937399
  • Filename
    6937399
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1992492