DocumentCode
1992618
Title
SEE characterization of the AMS 0.35 μm CMOS technology
Author
Ramos, J. ; Arias, Antoni ; Mora, J.M. ; Munoz, M. ; Ragel, A. ; Pinero, B. ; Ceballos, Joaquin ; Carranza, L. ; Sordo, S. ; Lagos, M.A. ; Espejo, S.
Author_Institution
Centro Nac. de Microelectron. - Consejo Super. de Investig. Cientificas (IMSE-CNM-CSIC) in Sevilla, Inst. de Microelectron. de Sevilla, Sevilla, Spain
fYear
2013
fDate
23-27 Sept. 2013
Firstpage
1
Lastpage
4
Abstract
This work presents experimental results for the single-event effects characterization of a commercial (Austria Microsystems) 0.35 μm CMOS technology. It improves and expands previous results. The knowledge gained is being applied in the development of a RHBD digital library.
Keywords
CMOS integrated circuits; digital libraries; radiation hardening (electronics); RHBD digital library; SEE characterization; commercial 0.35 μm CMOS technology; single-event effects characterization; size 0.35 mum; CMOS integrated circuits; CMOS technology; Clocks; Libraries; Single event upsets; Standards; Transient analysis; aerospace electronics; mixed-signal ASICs; radiation hardening; single-event effects;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location
Oxford
Type
conf
DOI
10.1109/RADECS.2013.6937402
Filename
6937402
Link To Document