DocumentCode
1992700
Title
Radiation effect in CMOS microprocessor exposed to intense mixed neutron and gamma radiation field
Author
Jin Xiaoming ; Ma Qiang ; Qi Chao ; Yang Shanchao ; Li Ruibin ; Bai Xiaoyan ; Liu Yan ; Wang Guizhen ; Lin Dongsheng ; Chen Wei ; Ding Lili
Author_Institution
Northwest Inst. of Nucl. Technol., Xi´an, China
fYear
2013
fDate
23-27 Sept. 2013
Firstpage
1
Lastpage
4
Abstract
Radiation effects of microprocessor in mixed neutron and gamma rays radiation field were researched. The ionizing energy deposited by neutron in Geant4 simulation accords with experimental data. Qualitative correlation is demonstrated between transistors and circuit.
Keywords
CMOS digital integrated circuits; gamma-ray effects; microprocessor chips; neutron effects; CMOS microprocessor; Geant4 simulation; gamma rays radiation field; intense mixed neutron-gamma radiation field; ionizing energy; radiation effect; CMOS integrated circuits; Degradation; Gamma-rays; Microprocessors; Neutrons; Pulse width modulation; Radiation effects; gamma irradiation; microprocessor; neutron irradiation; total ionizing dose effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location
Oxford
Type
conf
DOI
10.1109/RADECS.2013.6937406
Filename
6937406
Link To Document