• DocumentCode
    1993060
  • Title

    A 0.1 to 25 GHz HMIC Distributed Amplifier on AL203 Substrate

  • Author

    Gamand, Patrice

  • Author_Institution
    LABORATOIRES D´´ELECTRONIQUE ET DE PHYSIQUE APPLIQUE 3, avenue Descartes, 94450 LIMEIL-BREVANNES, FRANCE. A member of Philips Research Organization
  • fYear
    1985
  • fDate
    9-13 Sept. 1985
  • Firstpage
    541
  • Lastpage
    546
  • Abstract
    This paper carries out experimental results concerning distributed amplifier on alumina substrate. This amplifier, using 8 FETs of 0.5 ¿m gate length fabricated at LEP exhibits 6 ± 1 dB gain over the frequency range 0.1 to 25 GHz. In this paper, we describe the design of such an amplifier and we discuss possibilities for further improvements in distributed amplification.
  • Keywords
    Bandwidth; Capacitance; Distributed amplifiers; Electrical resistance measurement; FETs; Frequency measurement; Gain; Gallium arsenide; Power transmission lines; Scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1985. 15th European
  • Conference_Location
    Paris, France
  • Type

    conf

  • DOI
    10.1109/EUMA.1985.333534
  • Filename
    4132222
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1993060