Analysis of TID failure modes in SRAM-based FPGA based on gamma-ray and synchrotron X-ray irradiation

Total ionizing dose effect in SRAM-based FPGA is studied by means of common gamma-ray irradiation and synchrotron X-ray irradiation. In the whole-chip irradiation experiment, TID analysis of SRAM-based FPGA is implemented using on-line test system and IC parameter analyzer. The corresponding TID failure modes can be summarized as inability to be reconfigured and to be powered up. In the synchrotron X-ray irradiation experiment, functional error resulting from failure of POR component is observed, which prove that the specified zone in POR circuit is very sensitive to TID, and the failure of POR (Power-on Reset) circuit could be related to the failure mode inability to be powered up. Circuit simulation is executed to better understand the failure phenomenon.