DocumentCode
1993390
Title
From memory device cross section to data integrity figures of space mass memories
Author
Walter, Dennis ; Herrmann, Markus ; Griirmann, K. ; Gliem, F.
Author_Institution
Inst. f. Datentechnik, Tech. Univ. Braunschweig, Braunschweig, Germany
fYear
2013
fDate
23-27 Sept. 2013
Firstpage
1
Lastpage
7
Abstract
The influence of SEU and SEFI events in 4-Gbit DDR3 SDRAM on the data integrity of an example mass memory with a capacity of 4-Tbit and Single Symbol Error Correcting Reed-Solomon Code is investigated.
Keywords
DRAM chips; Reed-Solomon codes; error correction codes; radiation hardening (electronics); DDR3 SDRAM; SEFI; SEU; data integrity; mass memory; memory device cross section; memory size 4 GByte; single symbol error correcting Reed-Solomon code; Annealing; Bit error rate; Gold; Reed-Solomon codes; SDRAM; Single event upsets; Space vehicles; Bit Error Rate; DDR3 SDRAM; Error Correction; Mass Memory; Mean Time To First Uncorrectable Error; Reed-Solomon; SEE; SEFI; SEU;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location
Oxford
Type
conf
DOI
10.1109/RADECS.2013.6937439
Filename
6937439
Link To Document