Effectiveness analysis of a non-destructive Single Event Burnout test methodology

Author

Oser, P. ; Mekki, J. ; Spiezia, G. ; Fadakis, E. ; Foucard, G. ; Peronnard, P. ; Masi, A. ; Gaillard, R.

Author_Institution

Eur. Organ. for Nucl. Res. (CERN), Genève, Switzerland

fYear

2013

fDate

23-27 Sept. 2013

Firstpage

1

Lastpage

8

Abstract

It is essential to characterize power MosFETs regarding their tolerance to destructive Single Event Burnouts (SEB). Therefore, several non-destructive test methods have been developed to evaluate the SEB cross-section of power devices. Power MosFETs have been evaluated using a test circuit, designed according to standard non-destructive test methods discussed in the literature. However, destructive events were observed and affected the evaluation of the cross-section. This paper analyzes results obtained using different test circuit configurations based on standard non-destructive test methodologies and evaluates their respective effectiveness. In addition, protection methods are discussed and simulations are performed to better understand the underlying effects.

Keywords

nondestructive testing; power MOSFET; radiation hardening (electronics); semiconductor device testing; nondestructive single event burnout test methodology; power MosFET; test circuit configuration; Capacitors; Integrated circuit modeling; Leakage currents; MOSFET; Radiation effects; Resistors; Standards; Power MosFET; Single Event Burnout; circuit design; test method;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on

Conference_Location

Oxford

Type

conf

DOI

10.1109/RADECS.2013.6937453

Filename

6937453