DocumentCode
1995210
Title
A Broadband FET Amplifier in Integrating Waveguide Technology with an E-Plane Microstrip Insert
Author
Meier, U. ; Hinken, J.H. ; Stenzl, W.
fYear
1987
fDate
7-11 Sept. 1987
Firstpage
119
Lastpage
124
Abstract
This paper describes a broadband low noise waveguide amplifier with a GaAs-FET, combining advantages of a planar technology with advantages of the integrating waveguide technology (INWATE). A new waveguide-to-microstrip transition allows easy assembling, small dimensions, and good electrical behaviour. The design of a single stage X-band amplifier results in a gain of 9 ± 1.3dB over a bandwidth of 3.3 GHz with an associated noise figure of less than 3dB.
Keywords
Assembly; Bandwidth; Broadband amplifiers; FETs; Low-noise amplifiers; Microstrip; Noise figure; Planar waveguides; Waveguide components; Waveguide transitions;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1987. 17th European
Conference_Location
Rome, Italy
Type
conf
DOI
10.1109/EUMA.1987.333713
Filename
4132331
Link To Document