Shallow source/drain extensions for pMOSFETs with high activation and low process damage fabricated by plasma doping

Author

Takase, M. ; Yamashita, K. ; Hori, A. ; Mizuno, B.

Author_Institution

Central Res. Labs., Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

475

Lastpage

478

Abstract

Low sheet resistance and extremely shallow profiles are achieved by plasma doping with low process damage and high activation efficiency. High performance pMOSFETs have also been fabricated by taking advantage of well-controlled plasma doped extensions. Linear transconductance (Gm) of the pMOSFET with plasma doped extensions is about 30% larger than that of 10 keV ion implanted device with same source/drain junction depth.

Keywords

CMOS integrated circuits; MOSFET; doping profiles; integrated circuit yield; large scale integration; semiconductor doping; CMOS; LSI; activation efficiency; linear transconductance; pMOSFETs; plasma doping; process damage; shallow source/drain extensions; sheet resistance; source/drain junction depth; Boron; CMOS technology; Doping profiles; Ion implantation; MOSFETs; Plasma devices; Plasma immersion ion implantation; Plasma measurements; Plasma sources; Plasma temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650427

Filename

650427

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1995574