DocumentCode
1997304
Title
GaInNAs and quantum dot lasers - GaAs-based lasers for telecommunications
Author
Forchel, Alfred
Author_Institution
Tech. Physik, Wurzburg Univ., Germany
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
The work reviews on the status of GaAs-based lasers for the 1.3 to 1.5 /spl mu/m range with GaInNAs active layers as well as based on In(Ga)As quantum dots (QD). Routes for further improvements like the use of GaInNAsSb as proposed by J. Harris et al., Stanford, will be discussed.
Keywords
III-V semiconductors; gallium compounds; indium compounds; optical communication equipment; quantum dot lasers; wide band gap semiconductors; 1.3 mum; 1.5 mum; GaAs-based lasers; GaInNAs laser; quantum dot laser; telecommunications;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361808
Link To Document