Comparison of 6.5 kV silicon and SiC diodes

Author

Filsecker, Felipe ; Alvarez, Rodrigo ; Bernet, Steffen

Author_Institution

Power Electron., Tech. Univ. Dresden, Dresden, Germany

fYear

2012

fDate

15-20 Sept. 2012

Firstpage

2261

Lastpage

2267

Abstract

Silicon carbide (SiC) devices offer many advantages for the power electronics field. Even though there are commercial SiC diodes available, their use is limited to low power applications. This paper presents a SiC PIN diode module for medium voltage converters. The module, which has a rating of 6.5 kV and 1000 A, is compared to the commercial 6.5 kV, 1200A Si diode DD600S65K1. The analysis is based on the static behavior (on-state and blocking characteristic) and exemplary waveforms for diode turn-on, diode turn-off and IGBT turn-on transients at 3000V and 1000 A. Additionally, switching losses extracted out of measurements are plotted for currents between 50 and 1000A at junction temperatures of 25 and 125°C.

Keywords

elemental semiconductors; insulated gate bipolar transistors; losses; low-power electronics; p-i-n diodes; power convertors; silicon; silicon compounds; wide band gap semiconductors; DD600S65K1; IGBT turn-on transients; PIN diode; current 1200 A; current 50 A to 1000 A; diode turn-off; diode turn-on; exemplary waveforms; junction temperatures; low power applications; medium voltage converters; power electronics field; silicon carbide devices; static behavior; switching losses; temperature 25 degC to 125 degC; voltage 3000 V; voltage 6.5 kV; Insulated gate bipolar transistors; Schottky diodes; Silicon; Silicon carbide; Temperature measurement; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2012 IEEE

Conference_Location

Raleigh, NC

Print_ISBN

978-1-4673-0802-1

Electronic_ISBN

978-1-4673-0801-4

Type

conf

DOI

10.1109/ECCE.2012.6342433

Filename

6342433