Crystal-orientation controlled PZT FeRAM-capacitors using RF magnetron sputtering with 12"/spl phi/ single target

Crystal-orientation control of PZT is very important to obtain a ferroelectric capacitor with large remnant polarization. Perovskite PZT with {100}-orientation, parallel to the polarization axis, is obtained by RF-sputtering and 600/spl deg/C annealing. A metastable pyrochlore film, sputtered around 500/spl deg/C, is transformed to the crystal-orientated perovskite PZT film (stable phase). The PZT capacitor has large remnant polarization of 2P/sub r/=28 /spl mu/C/cm/sup 2/. The small capacitor, sized from 2 /spl mu/m/spl square/ to 100 /spl mu/m/spl square/, retains superior characteristics after Al metallization, being applicable to a high density FeRAM memory cell.