An advanced MOSFET design approach and a calibration methodology using inverse modeling that accurately predicts device characteristics

Author

Das, A. ; Newmark, D. ; Clejan, I. ; Foisy, M. ; Sharma, M. ; Venkatesan, S. ; Veeraraghavan, S. ; Misra, V. ; Gadepally, B. ; Parrillo, L.

Author_Institution

Motorola Inc., Austin, TX, USA

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

687

Lastpage

690

Abstract

We present a MOSFET design approach that contains a comprehensive analytic representation of an advanced MOSFET structure and doping profile. A methodology to extract parameters for the analytic representation based on device simulation and IV and CV measurements is described. The extracted model is scaled to sub-nominal dimensions to illustrate its ability to predict device characteristics.

Keywords

MOSFET; calibration; design engineering; doping profiles; parameter estimation; semiconductor device models; C-V measurements; I-V measurements; MOSFET design approach; analytic representation; calibration methodology; device characteristics prediction; doping profile; inverse modeling; parameter extraction; Analytical models; Calibration; Capacitance measurement; Data mining; Doping profiles; Inverse problems; MOSFET circuits; Predictive models; Semiconductor process modeling; Surfaces;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650476

Filename

650476