Enhanced electron emission and its stability from gated Mo-polycide field emitters

Author

Hyung Soo Uh ; Byung Gook Park ; Jong Duk Lee

Author_Institution

ISRC, Seoul Nat. Univ., South Korea

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

713

Lastpage

716

Abstract

Metal silicides are promising materials for field emission cathodes due to their high electrical conductivity and thermal stability. In this paper, we examined molybdenum (Mo) silicide formation on gated n/sup +/ poly-Si emitters to improve electron field emission and stability. Surface morphology and field emission properties of the pure poly-Si emitters and the Mo-silicided poly-Si (Mo-polycide) emitters have been examined and compared. Field emission from the Mo-polycide emitters exhibited significant enhancement in both electron emission efficiency and stability.

Keywords

current fluctuations; electron field emission; elemental semiconductors; molybdenum compounds; semiconductor device metallisation; silicon; surface topography; thermal stability; vacuum microelectronics; Mo silicide formation; Mo-silicidation; MoSi/sub 2/-Si; Si; electrical conductivity; electron emission efficiency; electron field emission; enhanced electron emission; field emission cathodes; gated n/sup +/ poly-Si emitters; polysilicon field emitters; surface morphology; surface roughness; thermal stability; Electron emission; Fabrication; Oxidation; Silicides; Silicon; Surface contamination; Surface morphology; Surface resistance; Thermal conductivity; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650482

Filename

650482