DocumentCode
2000516
Title
Process technologies for advanced metallization and interconnect systems
Author
Sun, S.C.
Author_Institution
Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
fYear
1997
fDate
10-10 Dec. 1997
Firstpage
765
Lastpage
768
Abstract
As device interconnects continue to scale, copper metallization and low dielectric constant materials will begin as soon as the 180 nm technology. The damascene approach with either CVD or PVD conformal coverage of good diffusion barrier layers, enhanced filling of Cu by CVD or electroplating as well as chemical-mechanical polishing of low-k material and Cu may be required to achieve high-level integration.
Keywords
CVD coatings; ULSI; chemical vapour deposition; copper; dielectric thin films; electroplating; integrated circuit interconnections; integrated circuit metallisation; polishing; 180 nm; CMP; CVD conformal coverage; Cu; Cu metallization; PVD conformal coverage; advanced interconnect systems; advanced metallization systems; chemical-mechanical polishing; damascene; diffusion barrier layers; electroplating; low dielectric constant materials; process technologies; Aluminum; Atherosclerosis; Conductivity; Copper; Delay estimation; Dielectric constant; Filling; Integrated circuit interconnections; Metallization; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-4100-7
Type
conf
DOI
10.1109/IEDM.1997.650494
Filename
650494
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