Fast high-power/high-voltage switch using series-connected IGBTs with active gate-controlled voltage-balancing

Author

Gerster, Christian

Author_Institution

Electron. Eng. and Dev. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland

fYear

1994

fDate

13-17 Feb 1994

Firstpage

469

Abstract

There exists an acute need for fast high-voltage solid-state switches in a broad area of applications. With the proposed method of active gate-controlled voltage balancing, fast high power/high voltage semiconductor switches with working voltages of several kilovolts using series-connected insulated gate bipolar transistors (IGBT) can be realized. Transient and static voltage balancing is tested on an experimental 3.5 kV/300 A switch with three series-connected 3rd-generation IGBTs

Keywords

insulated gate bipolar transistors; power transistors; semiconductor device testing; semiconductor switches; 3.5 kV; 300 A; HV; active gate-controlled voltage balancing; applications; semiconductor switches; series-connected IGBTs; solid-state switches; static voltage balancing; testing; transient voltage balancing; Delay; FETs; Insulated gate bipolar transistors; Insulation; Laboratories; Power semiconductor switches; Solid state circuits; Switching frequency; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 1994. APEC '94. Conference Proceedings 1994., Ninth Annual

Conference_Location

Orlando, FL

Print_ISBN

0-7803-1456-5

Type

conf

DOI

10.1109/APEC.1994.316362

Filename

316362