GaAs Mesfets and Related Monolithic Structures as Broadband Microwave Control Devices

GaAs MESFETs are becoming more widely used in control components such as switches, phase shifters and variable attenuators. In this review GaAs MESFET control devices are compared with Si PIN diodes, with an emphasis on device and technology capabilities. Models of the low power switching performance of conventional recess gate MESFETs will be presented, emphasizing the dependence of equivalent circuit parameters on material parameters and device geometry. Power handling limitations are also discussed, with an emphasis on the reduced capability at low frequency. Other MMIC control technologies are compared with conventional recessed-gate MESFET device structures.