DocumentCode
2003133
Title
Power handling and related frequency scaling advantages in piezoelectric AlN contour-mode MEMS resonators
Author
Zuo, Chengjie ; Rinaldi, Matteo ; Piazza, Gianluca
Author_Institution
Dept. of Electr. & Syst. Eng., Univ. of Pennsylvania, Philadelphia, PA, USA
fYear
2009
fDate
20-23 Sept. 2009
Firstpage
1187
Lastpage
1190
Abstract
This paper reports on the analytical modeling and experimental verification of the mechanically-limited power handling and nonlinearity in piezoelectric aluminum nitride (AlN) contour-mode resonators (CMR) having different electrode configurations (thickness field excitation, lateral field excitation, one-port and two-port configurations) and operating at different frequencies (177-3047 MHz). Despite its simplicity, the one-dimensional analytical model fits the experimental behavior of AlN CMRs in terms of power handling capabilities. The model and experiment also confirm the advantage of scaling (i.e. miniaturizing) the AlN CMRs to higher frequencies at which higher critical power density can be more easily attained up to values in excess of 10 ¿W/¿m3.
Keywords
aluminium compounds; crystal resonators; micromechanical resonators; 1D analytical model; AlN; AlN CMR; analytical modeling; electrode configurations; experimental verification; frequency scaling advantages; nonlinearity; piezoelectric AlN contour-mode MEMS resonators; piezoelectric aluminum nitride; power handling; Aluminum nitride; Electrodes; Electrostatics; Frequency; Impedance; Material properties; Micromechanical devices; Piezoelectric devices; Surface acoustic wave devices; Surface acoustic waves; AlN contour-mode resonator; frequency scaling; microelectromechanical systems (MEMS); nonlinearity; power handling;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium (IUS), 2009 IEEE International
Conference_Location
Rome
ISSN
1948-5719
Print_ISBN
978-1-4244-4389-5
Electronic_ISBN
1948-5719
Type
conf
DOI
10.1109/ULTSYM.2009.5441932
Filename
5441932
Link To Document