Experimental procedure influence on total dose CMOS inverters hardness

Author

Mondot, E. ; David, J.P.

Author_Institution

ONERA-CERT, Toulouse, France

fYear

1993

fDate

13-16 Sep 1993

Firstpage

306

Lastpage

312

Abstract

This issue deals with Co60 irradiation results on three commercial CMOS inverters. About ten years ago, it was proved that this type of “soft oxide” component could undergo rebound effect although only rad-hard NMOS was concerned. The work presented here takes into account dose rate (tested over 5 decades) and bias effects. The results of prediction with linear system theory are compared with experimental tests and discussed. Post-irradiation behavior with temperature may be very useful to understand long term evolution and so, can lead us to an explanation of linear system limitations in different cases

Keywords

CMOS integrated circuits; gamma-ray effects; integrated circuit testing; integrated logic circuits; logic gates; CMOS inverters; Co; Co60 irradiation results; bias effects; dose rate; gamma ray effects; linear system theory; long term evolution; post-irradiation behavior; radiation hardness; rebound effect; total dose; Annealing; CMOS technology; Dosimetry; Inverters; Laboratories; Linear systems; MOSFETs; Radiation hardening; Space technology; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on

Conference_Location

St. Malo

Print_ISBN

0-7803-1793-9

Type

conf

DOI

10.1109/RADECS.1993.316532

Filename

316532