Optimum DRO Synthesis

This paper describes the modification of an oscillator synthesis procedure [1] to incorporate a coupled dielectric resonator (DR) and hence enable the synthesis of a MESFET DRO. The technique produces optimum extrinsic MESFET terminations for maximum output power at the designated frequency and bias conditions. No constraints are placed on the embedding circuit topology enabling dielectric resonators to be employed at any port. Furthermore, the ability to be able to predict the output power, as a function of DR position, allows oscillator temperature stability to be safely optimised. A DRO designed using this technique has produced 23 mW of output power with an efficiency of 21% at 13.8 GHz.