Dose and neutron-fluence measurements in mixed gamma-neutron fields by means of semi-conductor dosimeters

Author

Tavlet, M. ; Florian, M. E Leon

Author_Institution

CERN, Geneva, Switzerland

fYear

1993

fDate

13-16 Sep 1993

Firstpage

27

Lastpage

32

Abstract

Semiconductor detectors (PIN diodes and MOS transistors) were irradiated around high-energy particle-accelerators. The radiation fields contain mainly gammas and neutrons; they are characterized by means of alanine and RPL dosimeters and activation foils. PIN diodes are sensitive to neutrons, MOS transistors are sensitive to gammas; their responses are compared to the ones given after reactor- and cobalt-irradiations respectively. These comparisons show that it is possible to discriminate the gamma and the neutron components of the irradiation. The fading of the various sensors is also recorded

Keywords

dosimeters; gamma-ray detection and measurement; insulated gate field effect transistors; neutron detection and measurement; p-i-n diodes; particle accelerators; semiconductor counters; MOS transistors; PIN diodes; RPL dosimeters; activation foils; alanine-based dosimeters; high-energy particle-accelerators; mixed gamma-neutron fields; neutron-fluence measurements; semiconductor dosimeters; sensor fading; Aging; Amino acids; Fading; Gamma ray detection; Gamma ray detectors; MOSFETs; Neutrons; Particle accelerators; Polymers; Sensor phenomena and characterization;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on

Conference_Location

St. Malo

Print_ISBN

0-7803-1793-9

Type

conf

DOI

10.1109/RADECS.1993.316556

Filename

316556