Asymmetrical irradiation effects in SIMOX MOSFETs

Author

Cristoloveanu, Sorin ; Ioannou, Dimitris E. ; Lawrence, Reed K. ; Campisi, George J. ; Hughes, Harold L.

Author_Institution

Lab. de Phys. des Composants a Semicond., CNRS, Grenoble, France

fYear

1993

fDate

13-16 Sep 1993

Firstpage

373

Lastpage

377

Abstract

Radiation tests on SIMOX MOSFETs were conducted with a 5 V bias applied to the drain during irradiation. This resulted in a non-uniform defect distribution along the channel, with the interface region near the drain more heavily damaged. The generated defects were mainly hole traps in the buried oxide and fast states at the front interface. Multiple implantation and capless annealing appear to improve the radiation hardness of SIMOX MOSFETs

Keywords

SIMOX; annealing; hole traps; insulated gate field effect transistors; ion implantation; radiation effects; semiconductor device testing; 5 V; SIMOX MOSFETs; asymmetrical irradiation effects; capless annealing; drain bias; fast states; hole traps; interface region; multiple implantation; nonuniform defect distribution; radiation hardness; radiation tests; Annealing; Charge measurement; Charge pumps; Current measurement; Degradation; MOSFETs; Silicon on insulator technology; Substrates; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on

Conference_Location

St. Malo

Print_ISBN

0-7803-1793-9

Type

conf

DOI

10.1109/RADECS.1993.316573

Filename

316573