Physical oxide thickness extraction and verification using quantum mechanical simulation

Author

Bowen, C. ; Fernando, C.L. ; Klimeck, G. ; Chatterjee, A. ; Blanks, D. ; Lake, R. ; Hu, J. ; Davis, J. ; Kulkarni, M. ; Hattangady, S. ; Chen, I.-C.

Author_Institution

Corp. R&D, Texas Instrum. Inc., Dallas, TX, USA

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

869

Lastpage

872

Abstract

Physical gate oxide thickness is extracted from TiN gate PMOS and NMOS capacitance voltage measurements using an efficient multi-band Hartree self-consistent Poisson solver. The extracted oxide thicknesses are then used to perform direct tunneling current simulations. Excellent agreement between measured a simulated tunnel current is obtained without the use of adjustable fitting parameters.

Keywords

MOS capacitors; MOSFET; capacitance; dielectric thin films; semiconductor device models; simulation; tunnelling; C-V measurements; NMOS capacitance-voltage measurements; PMOS capacitance-voltage measurements; TiN; TiN gate; direct tunneling current simulations; gate oxide thickness verification; multi-band Hartree self-consistent Poisson solver; physical oxide thickness extraction; quantum mechanical simulation; Boundary conditions; CMOS technology; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; MOS devices; Quantum mechanics; Thickness measurement; Tin; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650518

Filename

650518